The presence of a charge determines the value (1 or 0) of the memory cell. A floating gate is a gate with a special capacitor for its only electrical connection. The variables stored in the EEPROM kept there, event when you reset or power off the Arduino. Example routines for I2C communications exist on the Microchip website. My calls are to the code generated by MCC. So the act of starting communications will tell you if the EEPROM is present. The EEPROM memory devices have evolved from the old EPROM memories. PIC16F18326 write & read to EEPROM not working, using MCC generated code Hi: I am using a PIC16F18326 with the MPLAB X IDE 5.20 and MCC Version: 3.85.1. It has a grid of columns and rows with a cell that has two transistors at each intersection (see image below). Which was the previous technology in this area. 3. Write to it. When you push the button random values are saved to the EEPROM. On start up the EEPROM values are retrieved from the EEPROM and sent to serial Monitor. Internal EEPROM data erased or corrupted out in the field in an RF application: I`m trying to do simple test writes & reads to/from the EEPROM memory. It is similar to EPROM and thus developed to overcome the drawbacks of EPROMs. It is erased and programmed electrically i.e. After the unit cools down or a chip erase is executed, the issue disappears and the flash is working properly. int value = EEPROM.read(addr); As with the write function, we will have to indicate the address to read (addr), and the data will be saved in the variable value. External Flash memory or EEPROM devices: Unstable behavior for flash memory at high temperature. A typical EPROM has a window on the top side of the IC to allow the ultraviolet rays to reach the memory cells in order to erase the memory. Just attach a push button connected to ground and pin 5 of the Arduino. The I2C protocol has the EEPROM send an acknowledge bit when it is addressed. Wait for the write to complete. Flash memory is a type of EEPROM chip, which stands for Electronically Erasable Programmable Read Only Memory. Data is created in them by electrical pulses and a grid. The Idea here is to store a set of simple type variables sequentially in the EEPROM at a specific EEPROM address. EPROM memory cells use floating gate technology. For this we will use the EEPROM.read function, which will allow us to read bytes from EEPROM memory. Another function to consider is that of data recovery of course. The procedure to test read and write should be: Pick a memory location. This special capacitor takes on an electrical charge in a quantum physics effect called tunneling. If you imagine all of the bytes in a 512 Kbit EEPROM standing in a line from 0 to 64000 — because there are 8 bits to a byte and therefore you can fit 64000 bytes on a 512 Kbit EEPROM — then a memory address is the place in line where you would find a particular byte. 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